| 摘要 |
By applying a magnetic field perpendicular to a thin film high temperature superconductor (HTS) material (104) the HTS material may enter a mixed state, where the resistance can be controlled by varying the magnetic field. This variance of resistance may be utilized to develop a transistor-like device which can be combined to form logic gates. Using thin film techniques a scaled device can be constructed which allows use of the device in integrated circuits. A thin film magnet core is constructed in this integrated form to concentrate the magnetic field applied to the HTS material, thus reducing drive current requirements. Devices can be combined to form various logic gates and memory cells. A core memory using thin film magnet cores and HTS material is also described. |
