发明名称 ELECTRONIC CIRCUIT DEVICE
摘要 <p>PURPOSE:To improve junction characteristics of junction strength, wetting properties, etc., by making a brazing material to be within a specific range, by reducing thermal shrinkage stress in the process for cooling from a melting point, and by forming with a material with a tensile strength which is low enough for preventing breakdown from occurring in reference to a substrate. CONSTITUTION:A brazing material 11 has a malting point from 356 deg.C to 450 deg.C, thermal shrinkage stress is reduced in the process for cooling from the melting point, and a material with a low tensile strength which is enough for preventing breakdown in reference to a substrate 2 from occurring is used. That is, the Au-Ge brazing material 11 consisting of Ge with 10-15weight% has a low final coagulation temperature of approximately 356 deg.C and has a lower tensile strength than Ag brazing so that thermal shrinkage stress generated in the process for cooling from a melting point of 356 deg.C to room temperature in the junction process is small. Thus, a sufficient brazing strength can be secured without damaging the ceramic substrate 2.</p>
申请公布号 JPH02304958(A) 申请公布日期 1990.12.18
申请号 JP19890124304 申请日期 1989.05.19
申请人 HITACHI LTD 发明人 SATO RYOHEI;HIROTA KAZUO;TAKENAKA TAKATSUGU;WATANABE HIDEKI;AMEYA TOSHINORI;OTA TOSHIHIKO
分类号 H01L23/50;B23K35/30;C04B37/02;H01L21/60;H01L23/433;H01L23/498 主分类号 H01L23/50
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