| 摘要 |
High voltage (200-400 volts) Zener diodes having much improved resistance to degradation under 150 DEG C. HTRB are obtained by a junction passivation comprising a thermal oxide next to the silicon, covered by a TEOS CVD glass, a CVD nitride and a further TEOS CVD glass. Multiple Zener voltages are obtained with otherwise identical, simultaneous wafer processing steps by using epi-wafers having different epi doping and thickness. Back-side for wafer thinning is avoided.
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