发明名称 RADIATION EXPOSING MASK AND MANUFACTURE THEREOF
摘要 <p>PURPOSE:To make position distortion smaller by providing a radiationpenetrable pattern in the areas other than a radiation-absorber pattern, and equalizing the product of the stress and film thickness of the radiation-penetrable pattern with that of the stress and film thickness of the radiation-absorber pattern. CONSTITUTION:A radiation-absorber pattern 4 is provided on a radiation- penetrable thin film 2 provided on a housing 1. In addition, a radiation- penetrable pattern 3 is provided so as to fill up the gaps of the radiation- absorber pattern 4. And, the stress of the radiation-absorber pattern 4 is made equal to that of the radiation-penetrable pattern 3, and the occurrence of stress being distributed owing to the ununiformity of the patterns is reduced. Besides, when position distortion has been generated in the radiation-absorber pattern 4, stress is controlled by changing the film thickness of the radiation-penetrable pattern 3, without changing the film thickness of the radiation-absorber pattern 4. This makes it possible to control the generation of position distortion.</p>
申请公布号 JPH02304913(A) 申请公布日期 1990.12.18
申请号 JP19890124382 申请日期 1989.05.19
申请人 HITACHI LTD 发明人 KISHIMOTO AKIHIKO;SOGA TAKASHI;KUNIYOSHI SHINJI;MOCHIJI KOZO;KIMURA TAKESHI
分类号 G03F1/22;H01L21/027 主分类号 G03F1/22
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