Semiconductor memory device

摘要

A semiconductor memory device having a memory cell array of a folded bit line configuration comprises memory cells, two each of which are formed to share a contact hole and surrounded by an isolation trench, and data charge storage capacitance formed on the entire sidewall of the isolation trench except a part of the isolation trench where an isolation oxide film is formed on the sidewall of the isolation trench. The isolation oxide film separates the two memory cells from each other. One word line passes through a region for one bit memory cell, and two bit lines pass through a region for one bit memory cell.