Structure and method for improving high speed data rate in a DRAM

摘要

A dynamic random access memory has a bit of data selected by a multiplexed address. The row address latches twice as much data as can be selected by the column address which follows the row address. After the column address has been utilized, there is still a one of two selection between two bits of data required. One of the row addresses provides the final selection between the two bits of data. An array toggle signal available from an extra pin is used to switch the state of the internal signal which corresponds to the one row address signal which makes the final one of two selection. The array toggle signal thus makes it possible to access any of the latched data in a high speed mode in which only the column address is changed to select among the bits of data which are already latched.