发明名称 METHOD FOR PRODUCING FILM MASK USED FOR PRODUCTION OF HYBRID IC
摘要 <p>PURPOSE:To perform each of film setting, exposure drawing, film detachment and development only once, and to save an operator trouble by arranging plural pattern data two-dimensionally to subject them to exposure drawing and cutting them to obtain plural film masks. CONSTITUTION:Pattern data of 9 materials of one thick film hybrid IC are prepared with CAD (computer aided design), and these 9 pattern data are converted into pattern data of the whole surface where they are two- dimensionally arranged in three rows and three columns on CAD. This whole surface pattern data is subjected to exposure drawing on the film by a film drawing device, and this film is developed. As the result, one film where patterns 13 are arranged in three rows and three columns is obtained, and the developed film is cut along cutting lines 14 to obtain 9 film masks. Thus, film masks are produced with less trouble.</p>
申请公布号 JPH02304560(A) 申请公布日期 1990.12.18
申请号 JP19890126470 申请日期 1989.05.19
申请人 ADVANTEST CORP 发明人 KOIKE AKITO
分类号 G03F1/00;G03F1/68 主分类号 G03F1/00
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