| 摘要 |
PURPOSE:To obtain a masked substrate for X-ray lithography use, which is applied to a fine processing technique, by a method wherein a BN film, which is formed on the substrate, consists of BN (C, H) having the peak of a diffraction in a range that 2theta is 20 to 30 degrees by an X-ray diffraction measurement using CuKalpha rays. CONSTITUTION:Mixed gas consisting of boron source gas, carbon source gas, nitrogen source gas and carrier gas is introduced and is made to react in a reaction container, in which a substrate is held, and a film consisting of BN (C, H) is formed on the substrate. In the ratio of boron: carbon: nitrogen in this BN (C, H) film, the ratio of boron: nitrogen is nearly 1:1 in an atomic ratio and the remaining part is carbon. The amount of carbon is specially limited, but it is preferably 3% (weight) or less for keeping an optical transparency high and when a chemical stability and the like are considered, it is preferably 0.1% (weight) or more. Moreover, an impartment of conductivity is possible by the existence of carbon and the prevention of electrification which causes primarily an inhibition in a lithography can be contrived. |
