| 摘要 |
PURPOSE:To prevent a kink phenomenon by a method wherein a groove which is extended under an island-shaped semiconductor film and which is connected to each other or is approached from both sides is formed, an insulating film is formed on the exposed surface including the groove part of the island-shaped semiconductor film and a gate electrode to which a part filled the passage groove is united so as to face the groove on the island-shaped semiconductor film is formed. CONSTITUTION:An Si semiconductor film on an SiO2 insulating layer 2 of an Si substrate 1 is patterned; an island-shaped semiconductor film 3 is formed; the insulating layer 2 is etched from the central part on both sides of the island-shaped semiconductor film 3 is etched; a groove 11 which is extended under the island-shaped semiconductor film 3 and which is connected to each other is formed. Then, an SiO2 film is formed on the exposed surface including a part of the groove 11 of the island-shaped semiconductor film 3; it is used as a gate insulating film 4; a gate electrode 12 to which a part filled the passage groove 11 is united so as to face the groove 11 on the island- shaped semiconductor film 3 is formed. Then, a source-drain region 6 is formed by implanting ions. An SiO2 film 7 is formed by executing a dry oxidation operation. In addition, a PSG-layer insulating film 8 and a metal wiring part 9 are formed and an FET is completed.
|
