| 摘要 |
PURPOSE:To reproduce an accurate shape of a mask by a method wherein a support stage of a material having a large coefficient of thermal expansion is used so that a stretch of the surface of a support stage during a process to form a film can be made larger than a stretch of the mask. CONSTITUTION:While a mask formed of a material such as, e.g. SUS (1.4X10<-5> K<-1>), nickel (9X10<-5> K<-1>) or the like is used, a support stage formed of a material whose coefficient of thermal expansion is larger than that of the material for the mask, e.g. aluminum (3X10<-5> K<-1>), brass (1.5X10<-5> K<-1>), copper (1.6X10<-5> K<-1>) or the like, is used. Thereby, a stretch of the surface of the support stage during a process to form a film such as a vapor deposition process or the like is made larger than a stretch of the mask. As a result, a clamping force of the mask can be maintained or increased; a close contact property between the mask and a wafer can be secured. |
