| 发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE OBTAINED THEREBY |
| 摘要 |
A method of manufacturing a semiconductor device comprising selective etching of a phosphorus glass layer covering the surface of a semiconductor substrate using a silicon nitride film selectively formed on said glass layer as a mask.
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| 申请公布号 |
US3635774(A) |
申请公布日期 |
1972.01.18 |
| 申请号 |
USD3635774 |
申请日期 |
1968.05.01 |
| 申请人 |
HITACHI LTD. |
发明人 |
MASAYA OHTA |
| 分类号 |
H01L23/29;(IPC1-7):H01L7/50;H01L7/00 |
主分类号 |
H01L23/29 |
| 代理机构 |
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代理人 |
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| 地址 |
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