| 摘要 |
PURPOSE:To effectively recognize a wafer mark transferred to an epitaxial layer with a pattern hanger by composing a groovelike pattern on a semiconductor wafer of a pair of groovelike patterns opposed in parallel at a predetermined interval. CONSTITUTION:A wafer mark 100 is formed of the L-shaped first pattern formed by perpendicularly bending at the center, the second pattern 102 disposed at 75-150mum in parallel, and the third pattern 103. Further, the pattern 101 is formed of a pair of chevron type first patterns 101a, 101b isolated at 10-25mum in parallel, and the second and third patterns are formed of pairs of patterns 102a, 102b, 103a, 103b isolated at 10-25mum. A mask mark 110 is formed of the fourth pattern 11 and fifth pattern 112, and of a pair of slitlike patterns 111a, 111b and 112a, 112b of 2-3mum of width. Further, the pairs of the patterns 111a, 111b and 112a, 112b are disposed in parallel at an interval of 10-25mum. |
