发明名称 IMPROVED GROUP I-III-VI2 SEMICONDUCTOR FILMS FOR SOLAR CELL APPLICATION
摘要 <p>This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate (10), a Group I-III-VI2 semiconductor absorber layer (12) and a transparent window layer (14). The mechanical bond between the substrate and the Group I-III-VI2 semiconductor layer is enhanced by an intermediate layer (13) between the substrate and the Group I-III-VI2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI2 semiconductor layer.</p>
申请公布号 WO1990015445(A1) 申请公布日期 1990.12.13
申请号 US1990003220 申请日期 1990.06.07
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