发明名称 |
PROCESS FOR PRODUCING A CuCr CONTACT MATERIAL FOR VACUUM SWTICHEs AND APPROPRIATE CONTACT MATERIAL |
摘要 |
Purely powder-metallurgical or sinter impregnation processes are often used to manufacture CuCr contact materials. Here the aim is to obtain the lowest possible residual porosity, which should be < 1 %. According to the invention, a powder moulding of the components is densified in two stages; the first stage is a sintering process with a densification of the sintered body to a closed porosity and the second stage is a hot isostatic pressing process (HIP) in which the unencased workpieces are taken to a final density amounting to a space occupation of at least 99 %. Thus an economical method of manufacturing high-grade material is obtained. It is possible in particular to produce multi-layer contacts or self-adhesive bonds between the sintered body and a solid substrate, e.g. a copper contact bolt. |
申请公布号 |
WO9015424(A1) |
申请公布日期 |
1990.12.13 |
申请号 |
WO1989DE00343 |
申请日期 |
1989.05.31 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
KIPPENBERG, HORST;HAUNER, FRANZ |
分类号 |
B22F3/14;B22F3/11;B22F3/15;B22F5/00;B22F5/10;B22F5/12;C22C1/04;H01H1/02;H01H11/04;H01H33/66 |
主分类号 |
B22F3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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