发明名称 PROCESS FOR PRODUCING A CuCr CONTACT MATERIAL FOR VACUUM SWTICHEs AND APPROPRIATE CONTACT MATERIAL
摘要 Purely powder-metallurgical or sinter impregnation processes are often used to manufacture CuCr contact materials. Here the aim is to obtain the lowest possible residual porosity, which should be < 1 %. According to the invention, a powder moulding of the components is densified in two stages; the first stage is a sintering process with a densification of the sintered body to a closed porosity and the second stage is a hot isostatic pressing process (HIP) in which the unencased workpieces are taken to a final density amounting to a space occupation of at least 99 %. Thus an economical method of manufacturing high-grade material is obtained. It is possible in particular to produce multi-layer contacts or self-adhesive bonds between the sintered body and a solid substrate, e.g. a copper contact bolt.
申请公布号 WO9015424(A1) 申请公布日期 1990.12.13
申请号 WO1989DE00343 申请日期 1989.05.31
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 KIPPENBERG, HORST;HAUNER, FRANZ
分类号 B22F3/14;B22F3/11;B22F3/15;B22F5/00;B22F5/10;B22F5/12;C22C1/04;H01H1/02;H01H11/04;H01H33/66 主分类号 B22F3/14
代理机构 代理人
主权项
地址