发明名称 LAMINATED TYPE SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To increase the overall integration degree of a laminated type semiconductor integrated circuit by performing signal transmission between the upper and lower layers with a columnar semiconductor whose conductivity is controlled by an external electrode. CONSTITUTION:The conductivity of a columnar semiconductor 7a can be controlled by producing a depletion layer 10 in the columnar semiconductor 7a by changing the voltage of an external electrode 8 or 9, and then changing the size of the depletion layer 10 produced. Namely, this columnar semiconductor 7a operates by dint of the depletion layer 10 like a junction FET which controls the conductivity of the channel. Besides, each gate electrode 8, 9 can be used independently and signals different from each other can be applied to them.
申请公布号 JPH02301162(A) 申请公布日期 1990.12.13
申请号 JP19890122010 申请日期 1989.05.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 KUMAMOTO TOSHIO;KONO HIROYUKI
分类号 H01L25/18;H01L21/3205;H01L21/8234;H01L23/52;H01L25/065;H01L25/07;H01L27/00;H01L27/088;H01L29/786 主分类号 H01L25/18
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