| 摘要 |
<p>PURPOSE:To prevent excessive charge-up to a bit line capacitor from being performed and to attain a fast operation by providing an excessive charge detection circuit and an excessive charge discharging circuit to the bit line capacitor at a sense amplifier circuit for a read-only memory. CONSTITUTION:When the excessive charge detection circuit 24 detects the excessive charge-up by receiving bit line potential Va, the excessive charge discharging circuit 25 is operated, and discharges the excessive potential of a bit line. When the bit line potential is decreased by the above discharge and an excessive charge-up state is eliminated, the operation of the circuit 25 is stopped. Thereby, it is possible to reduce sense time lag for the discharge of the excessive charge, and to attain acceleration and high integration.</p> |
