| 摘要 |
An improved process is described for depositing TiW/TiWN/TiW/Au metallization (18,20,22,24) which provides superior adhesion properties, excellent barrier properties and which is suitable for use with metal line widths of the order of one micron or smaller. It is important in order to obtain these properties to ensure that the layer (18) immediately underlying the gold layer (24) be substantially pure TiW deposited in a nitrogen free sputtering atmosphere. To this end, the gas supply manifolds (44) and deposition chamber (30) are purged and the chamber (30) evacuated following deposition of the TiWN layer (20) and prior to deposition of the TiW layer (22) underlying the gold layer (24). A final TiW layer (26) is also conveniently placed on top of the gold layer (24) to act as an etching mask. |
