| 摘要 |
A method of manufacturing iron garnet layers on a substrate, in a layer sequence of different order by means of RF-cathode sputtering in an inert gas plasma, using a target comprising predominantly an iron garnet phase in addition to residual phases having a substantially equal sputtering rate, the ions of said inert gas plasma bombarding the growing layer having an ion energy of less than 102 eV and a pressure in the range from 0.1 to 2.0 Pa, in which method RF-power is fed into the target electrode (cathode) at a RF-voltage of approximately 200 Vrms, thereby first depositing an amorphous to X-ray amorphous iron garnet layer as an intermediate layer at a substrate temperature below 460 DEG C. and, subsequently, a polycrystalline iron garnet layer at a substrate temperature exceeding 520 DEG C., while simultaneously applying a RF-voltage of approximately 50 Vrms to the substrate electrode, which voltage is linearly reduced during the deposition of the first 5-10 nm of the layer to a floating potential relative to earth. |
