SEMICONDUCTOR DEVICE WITH PRESSURE CONNECTION MEANS

摘要

According to the present invention, one surface of a resistor plate (7) is arranged to face first electrodes (4) which are formed on a first region of one surface of a semiconductor element assembly. One surface of a conductor plate (5) is arranged to face the other surface of the resistor plate (7). Pressure is applied to the other surfaces of the semiconductor element assembly and the conductor plate (5), to form junction surfaces between the first electrodes (4) and the resistor plate (7) as well as between the resistor plate (7) and the conductor plate (5) to connect them with pressure. This structure is equivalent to inserting resistors between the first electrodes (4) and the conductor plate (7). Such resistors uniformalize distributed or partial currents flowing in respective parts of the semiconductor element assembly, whereby any local current concentration can be prevented, to thereby improve switching characterizistics and controllable gate turn-off current.