发明名称 Semiconductor memory device.
摘要 <p>When data read out from a memory cell array (11) is output to an external device through an output buffer (15), a first read control pulse signal (P1) and a second read control pulse signal (P2a) are generated in response to a change in address signal (Add). An operation for reading out data is controlled using the first and second read control pulse signals (P1, P2a). By such control, when an address signal (Add) seems to be changed by noise generated by a change in power source potential or the like due to a change in output, the noise can be removed, and thus the output (15) buffer is not erroneously operated.</p>
申请公布号 EP0401521(A2) 申请公布日期 1990.12.12
申请号 EP19900108585 申请日期 1990.05.07
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OKADA, YOSHIO, C/O INTELLECTUAL PROPERTY DIV.
分类号 G11C7/22;G11C8/18;G11C11/413;G11C11/41 主分类号 G11C7/22
代理机构 代理人
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