发明名称 Opto-semiconductor device and method of fabrication of the same.
摘要 <p>An opto-semiconductor device comprising a light-emitting part (22) formed on a substrate (21), a transparent insulating monocrystalline layer (24) formed over the entire surface of the substrate covering the light-emitting part, a contact window (25) opening through the transparent insulating monocrystalline layer in the centre of the light-emitting part, and an electrode (26) formed of a transparent conductive monocrystalline layer passing through the contact window and connected to the central part of the light-emitting part. The electrode (26) is formed on the transparent insulating monocrystalline layer. A transparent insulating monocrystalline layer (23) may additionally be formed on the device including the electrode (26) formed of the transparent conductive monocrystalline layer, and a photo-sensitive device formed of a monocrystalline layer may be provided on the transparent insulating monocrystalline layer (24).</p>
申请公布号 EP0402114(A2) 申请公布日期 1990.12.12
申请号 EP19900306150 申请日期 1990.06.06
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 TSUBOTA, TAKASHI, C/O OKI ELECTRIC IND. CO., LTD.
分类号 H01L31/173;H01L33/42 主分类号 H01L31/173
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