| 摘要 |
<p>Process and device for plasma external deposition on a rod of silica substantially free from hydroxyl ions, optionally doped with a view to modifying its refractive index, by reaction of a silicon compound and optionally of doping compounds with oxygen in the presence of a gas plasma heated to very high temperature by induction with the aid of a high-frequency generator.
<??>The rod on which the deposition of silica is performed is maintained in a leakproof vessel isolated from the surrounding atmosphere and fed (20) with atmospheric air which is subjected successively to a filtration (31), a compression (32) and a refrigeration (33), a purging of the condensed water (35) and then a final drying by absorption (36,38).
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