| 摘要 |
PURPOSE:To attain high speed operation and noise immunity even with a single power supply by connecting the gate and the source of a C-MOSFET whose output circuit is a complementary type comprising a P-MOS and an N-MOS respectively so as to constitute a driving circuit. CONSTITUTION:When a driving signal is set, the output of a photocoupler 1 goes to a low level, the output of an NOT gate 8 goes to a high level, the output of an NOT gate 10 goes to a low level (in figure, a P-MOS 16 and an N-MOS-19 are turned on and others are turned off), the input capacitance of a MOSFET 6 is charged via a resistor 15 and the MOSFET 6 is turned on. In such a case, the gate level of the MOSFET 6 reaches a +E(V) with respect to the source level. When the driving signal is reset, the output of the photocoupler 1 goes to a high level, the output of the NOT gate 8 goes to a low level and the output of the NOT gate 10 goes to high level (in figure, a P-MOS 18 and an N-MOS-17 are turned on and others are turned off), the input capacitance of the MOSFET 6 is reverse-charged and the MOSFET 6 is turned off, In such a case, the gate level of the MOSFET 6 is negative with respect to the source. |
