发明名称 |
Process for forming one or more substantially pure layers in substrate material using ion implantation |
摘要 |
A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.
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申请公布号 |
US4976987(A) |
申请公布日期 |
1990.12.11 |
申请号 |
US19890391904 |
申请日期 |
1989.08.10 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE DEPARTMENT OF ENERGY |
发明人 |
MUSKET, RONALD G.;BROWN, DAVID W.;MUNIR, ZUHAIR A. |
分类号 |
C23C14/48;C23C14/58 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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