ETCHING PROCESS OF SEMICONDUCTOR,申请号JP19890120716-传众专利搜索

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发明名称	ETCHING PROCESS OF SEMICONDUCTOR
摘要
申请公布号	JPH02299229(A)	申请公布日期	1990.12.11
申请号	JP19890120716	申请日期	1989.05.15
申请人	SEIKO EPSON CORP	发明人	IWANO HIDEAKI
分类号	H01L21/302;H01L21/3065	主分类号	H01L21/302
代理机构		代理人
主权项
地址

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