| 摘要 |
PURPOSE:To make it possible to form a gate having a T-shaped section easily and with good reproducibility by a method wherein a gate forming resist pattern, which has such a hole as a resist is left on the base part of the hole in a constant thickness and the width of the section of the hole becomes narrower as the width goes from the base part to the opening part of the hole, is combined with a temporary gate. CONSTITUTION:In case a gate of a field-effect transistor on a semiconductor substrate is formed, a gate forming resist pattern 18, which has such a hole 17 as a resist layer thinner than the thickness of a temporary gate 8 is left on the base part of the hole, the section of the hole is formed into a form that the width of the section becomes narrower as the width goes from the base part to the opening of the hole and the upper end of the gate 18 is exposed, is formed. After that, the gate 8 is removed by etching and a gate material is deposited on the whole surface of the treated substrate 1. Then, the pattern 18 is removed to form the gate. Thereby, a gate having a T-shaped section can be formed with good reproducibility using a simple process and even if the fine formation of the gate is conducted, a gate resistance can be inhibited lowly.
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