Method of forming pattern and apparatus for implementing the same

摘要

Prior to etching by an etchant, a low concentration solution of cerium ammonium nitrate [(NH4)2Ce(NO5)6] is caused to adhere onto an electron-beam resist pattern, thus to improve hydrophilic property of the resist pattern. As a result, a metal thin film is etched in conformity with the resist pattern. Thus, a fine pattern of the metal thin film is provided.