| 摘要 |
PURPOSE:To make a semiconductor memory device high in degree of integration and density by a method wherein a memory cell selection transistor, a cell plate, and a charge storing capacitive insulating film are three-dimensionally laminated to form the semiconductor memory device. CONSTITUTION:A first insulating film 20 formed on the surface of a semiconductor substrate is made to serve as a charge storing capacitor, a first conductive film 21 formed on the first insulating film 20 is made to serve as a cell plate, and a semiconductor film 28 formed on interlaminar second insulating films 25 and 26 on the first insulating film 21 is made a selection transistor forming region. Therefore, a semiconductor memory device of this design is constituted in such a structure that a region where a charge storing capacitor is formed is stacked up on another region where a transistor is formed, whereby an element forming region can be made small in area. By this setup, a semiconductor memory device capable of being made high in degree of integration and density can be obtained. |
