发明名称 X-RAY LITHOGLAPHY MASK
摘要 PURPOSE: To improve the reliability of X-ray lithography and the preciseness of a pattern by forming a stress buffering member on the transmissive substrate of a mask so as to bury an X-ray absorbing layer. CONSTITUTION: A stress-buffering member 25 is formed on a transmissive substrate 22, so as to bury an X-ray absorbing layer 23. In this case the member 25, the external distorting phenomenon of a mask caused by thermal expansion is removed because horizontal internal stresses F1 , F2 , and F3 exist in each part of the mask, and vertical stresses offset each other and become zero. In addition, the X-ray absorbing layer 23 having a stripe-like mask pattern can be protected from damages, etc., and the adjustment and accuracy of the line width of the pattern can be improved. Therefore, the reliability of X-ray lithography can be improved, and moreover the preciseness of the mask pattern can be improved by preventing the pattern from being damaged.
申请公布号 JPH02299219(A) 申请公布日期 1990.12.11
申请号 JP19890142287 申请日期 1989.06.06
申请人 SANSEI ELECTRON CO LTD 发明人 KYO HIROHIDE
分类号 G03F1/22;G03F7/20;H01L21/027;H01L21/08 主分类号 G03F1/22
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