Method of producing layer structure of a memory cell for a dynamic random access memory device,申请号US19890377002-传众专利搜索

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发明名称	Method of producing layer structure of a memory cell for a dynamic random access memory device
摘要
申请公布号	US4977102(A)	申请公布日期	1990.12.11
申请号	US19890377002	申请日期	1989.07.07
申请人	FUJITSU LIMITED	发明人	EMA, TAIJI
分类号	H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108	主分类号	H01L27/04
代理机构		代理人
主权项
地址

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