| 摘要 |
PURPOSE: To simplify an electronic circuit for reading-out of a detection signal by so constituting that, on the one side, a semiconductor part between electrodes is completely depleted, and on the other side, a drift electric field is generated at the depleted part, while operating. CONSTITUTION: In an n-type wafer 1, p<+> -type strip-like areas 2a-2e, small p<+> - regions 4a-4e and an n<+> -area 5 acting as an anode are provided, and a large p<+> -scale electrode region 3 the bottom surface is provided. While operating, a voltage is applied to the electrodes 2a-2e, 3 and 4a-4d, and a depression region is formed first below the electrodes 2a-2e and 4a-4d or above the electrode 3. If the voltage is appropriately selected, a negative electric charge carrier in an electric field is moved from left to right by the drift electric field in a central part of the wafer 1. For example, if an X-ray quantum 6 is absorbed, a large number of electron-hole pairs are generated at an absorption position. And holes are absorbed by the electrode 3, and electrons move toward the electrode 2e, and they are detected with detection/amplifier circuits 12 and 10, respectively.
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