| 摘要 |
<p>PURPOSE:To enable a thin film to function as a stopping film of etching and prevent ON current of TFT from being reduced without intriguing a lower-layer non-doped semiconductor layer by performing etching using an etching method with much larger etching rate for a doped semiconductor layer as compared with an insulating material thin film. CONSTITUTION:A gate electrode G consisting of a Ti film is formed on an insulating glass substrate 1 and the entire surface including it is covered with an SiN gate insulating film 2 with a thickness of approximately 3000Angstrom , a non- doped a-Si film 3 with a thickness of approximately 100Angstrom , an SiO2 film 10 which is an insulating material thin film with a thickness of approximately 30Angstrom , and a laminated film consisting of a B-doped a-Si film 4. After that, a film 4 is eliminated by the reactive ion etching method using a mask of a resist film 5 which is position-aligned to an electrode G, where the blow rate of reaction gas is CCl4/O2=100/10sccm, pressure is approximately 0.1Torr, and discharge power is approximately 200W, and then the film 10 is eliminated by a buffer fluoric acid liquid. After that, the remaining films 4 and 10 are enclosed by an N<+> type a-Si film 6 and a Ti film 7.</p> |
