| 摘要 |
<p>PURPOSE:To contrive the improvement in performance and in reliability by enabling the mutual conversion of wavelength between a basic and main line system and a subscriber system and providing interchangeability with the conventional information processing devices by integrating a PIN photodiode for short wavelength, a semiconductor laser for ling wavelength, and a GaAs MESFET for driving a laser monolithicly on an InP substrate. CONSTITUTION:On a semi-insulating GaAs or InP substrate 1, a photodetector 21 is arranged, which is provided with at least a p-n junction or a light absorbing layer 4 using a GaAs semiconductor including GaAs or AlGaAs as a component material. Also on the substrate 1, a light emitting element 23 is arranged, which is provided with at least a p-n junction and a light emitting layer using an InP semiconductor layer including InGaAs or InGaAsP as a component material. Then, a GaAs semiconductor electronic device is formed in the region except said photodetector element and the light emitting element on the substrate 1. Those are all integrated on buffer layers 2 and 6 composed of a GaAs semiconductor or an InP semiconductor. Such constitution is an interface from a subscriber system to a base and main line system and it operates as a light repeater for light sending and receiving.</p> |
