| 摘要 |
1351985 Semi-conductor device HITACHI Ltd 13 July 1971 [28 Aug 1970] 32890/71 Heading H1K A semi-conductor device comprises a substrate 1 having an insulating film 3 thereon, a conductive supply ribbon 4 on the film 3, and at least one further conductive ribbon, 5, 6 on the film 3, electrically separate from, but adjacent and parallel to, the supply ribbon 4. The further ribbons are earthed to the same potential as the substrate to remove leakage charges from the supply ribbon and so prevent the formation of parasitic inversion channels in the substrate. The ribbons 5, 6 may be arranged one on each side of the supply ribbon 4. The device may be a nine IGFET shift register, the ribbons being of aluminium, the substrate of silicon with boron doped regions 2, and the film 3 may be of thermally grown oxide. |
