发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent an electric current from flowing to a substrate of a container at an ON/OFF operation of a switching element by a method wherein a conductor connected to an output terminal is overlapped with a conductor connected to a negative terminal via an insulating layer. CONSTITUTION:An electrode body 41 where a transistor 1 and a diode 31 are fixed and bonded to the surface, an electrode body 61 where a transistor 2 and a diode 32 are fixed and bonded to the surface and base electrode bodies 81, 82 are not fixed directly onto an insulating layer 12 on a good conductive substrate 11 but are fixed via an electrode body 52 and an insulating layer 14 in between. A negative terminal 5 is fixed and bonded to the electrode body 52. When the transistors 1 and 2 are turned on and off and a potential of an output terminal 6 and the electrode body 61 is changed, an electric current of dV/dtXC' flows to the negative terminal 5 which is normally grounded through the electrode body 52 via the insulating layer 14 from the electrode body 61 by this potential change of dV/dt and a capacity of C' of the insulating layer 14. As a result, the electric current hardly flows to the good conductive substrate 11 via the electrode body 52 and the insulating layer 12; even when a human body comes into contact with a part of the good conductive substrate of a container for a semiconductor device, no influence is caused; it is not required to ground a conductor part of the container.</p>
申请公布号 JPH02298065(A) 申请公布日期 1990.12.10
申请号 JP19890119835 申请日期 1989.05.12
申请人 FUJI ELECTRIC CO LTD 发明人 FURUHATA SHOICHI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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