| 摘要 |
PURPOSE:To relax concentration of an electric field near a barrier which is generated when an inverse voltage is applied to the barrier and enhance high breakdown strength effect by specifying the thickness of a tunnel barrier layer, the height of a potential barrier, and a sheet resistance constituting a semiconductor device, respectively. CONSTITUTION:A high-resistance N-type region 3 is accumulated on an N<+> type region 2 consisting of GaAs when creating a Schottky barrier diode by the epitaxial growth method for forming a semiconductor substrate 1. Then, a Ta thin layer is vacuum- deposited on the entire surface of the region 3 and is heat-treated for forming a tunnel barrier film consisting of a Ta oxide film thin layer 4 which functions as an insulating material thin layer. At this time, the thickness is set to 10-200Angstrom , potential barrier between itself and a semiconductor region is set to 0.3eV or more, and this sheet resistance is prescribed to be 10kOMEGA/square or more. After that, the central part of element is eliminated by etching to enable an opening 5 to be provided, to enable it to be embedded by an Al barrier electrode 6 contacting the region 3 for creating a rectification barrier, and to cause a Schottky barrier 7 to be produce on the interface. Then, an ohmic electrode 8 and an electrode 12 are mounted on the rear surface of the substrate 1 and on the electrode 6, respectively. |
