| 摘要 |
PURPOSE:To obtain a photosensitive composition improved in sensitivity to deep UV and resistance to oxygen reactive ion etching by mixing a specified polymer with an oxo acid ester compound and a compound which can generate an acid upon exposure to light. CONSTITUTION:A photosensitive composition is obtained by dissolving 100 pts.wt. alkali-soluble polymer having a phenolic skeleton (e.g. phenol novolak resin), 1-500 pts.wt. oxo acid ester compound (e.g. methyl 2-formylpropionate and 0.01-0.05wt.% compound which can generate an acid upon irradiation with light (e.g. iodoniumtrifluoromethane sulfonate). This composition is applied to a substrate, dried, exposed to light by irradiation with 1-10J/cm<2> of deep UV through a mask having any desired pattern, developed with an aqueous alkali solution (e.g. aqueous tetramethylammonium halide oxide solution), and formed into any desired resist pattern by dissolving the unexposed area. |
