| 摘要 |
Process for producing group III-V integrated semiconductor devices, including the production, on a silicon Si substrate, of a first so-called nucleation layer of gallium arsenide GaAs, followed by a second layer of gallium arsenide GaAs, then a constrained structure of III-V material, and including thermal cycles, characterised in that the constrained structure consists of two epitaxial layers of the same III-V compound and which alternate and is produced in the course of a so-called first series of thermal cycles in which each cycle comprises two phases of growth at respectively two distinct and steady temperatures during the growth operation. Application: microwave and optoelectronic circuits. <IMAGE>
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