| 摘要 |
PURPOSE:To obtain the stable laser whose light emitting efficiency is not degraded for a lont time by cleaving the resonant surface of the semiconductor laser in an inactive gas atmosphere of 1 torr and less, protecting the cleaved surfaces by protecting films, and suppressing the generation of anoxide film which is inherent to a crystal. CONSTITUTION:A narrow groove is provided at the position where a semiconductor laser substrate 1 which is formed in a wafer state is cleaved. The substrate is fixed to a holder made of a bimetal 3 and put in a sputtering device 10. The inside of the device 10 is made to be a vacuum state by using an exhausting port 9. Then the bimetal 3 is bent so as to apply elastic stress to the substrate 1. Then the substrate is cleaved and the resonant surfaces are exposed. Since the inside of the device 10 is in the high vacuum state of about 1X10<-6> torr, the resonant surfaces 5a and 5b which are the cleaved surfaces are kept clean. Thereafter the pressure in the device 10 is made to be 1X10<-3>-1X10<-4> torr, and an SiO2 sputtering material 8 is sputtered by using Ar<+> ions. Thus the material 8 is attached to the resonant surfaces 5a and 5b to the thickness of 1,000-3,000Angstrom . |
