Bipolar semiconductor device prodn. - with low capacitance back face contact

摘要

In the prodn. of bipolar semiconductor devices using differential epitaxy, the novelty comprises (a) producing at least one semiconductor device consisting only of active semiconductor layers and an etch-step layer; (b) stabilising and insulating the device at its sides by polycrystalline semiconductor regions; and (c) producing a low capacitance backface contact for the device. USE/ADVANTAGE - The process is esp. useful in prodn. of bipolar devices (e.g. bipolar diodes such as IMPATT diodes) and/or circuits having silicon substrates. Low capacitance bipolar devices with good heat conduction are produced.