发明名称 MANUFACTURING METHOD OF ALUMINUM NITRIDE SUBSTRATE
摘要 PURPOSE:To obtain an AlN substrate which has excellent bond properties without reducing heat conductivity by adding metallizing assistant powder comprising W or Mo metal powder or its carbonate or an oxide and forming a green sheet and then calcining said green sheet. CONSTITUTION:1 to 5 part weight W powder, which serves as a metallized assistant, is mixed with 100 part weight AlN powder to which 7wt.% oxidative yttrium is added while 10 pts.wt. polyvinyl butyral is mixed there as a binder and 10 pts.wt. dibutyl phthalate is mixed as a plasticizer and 50 pts.wt. ethanol is mixed as a dispersant, thereby producing a green sheet for the surface layer. The green sheet 1 for the surface layer which contains the metallizing assistant is placed on the AlN green sheet layer 2 and integrated into one piece under the application of pressure. After the application of pressure, the green sheet is calcined in the N2 gas stream so that an AlN substrate may be formed. Since this AlN substrate maintains a high heat conductivity of around 200W/mk, it is very useful as a substrate for an integration circuit.
申请公布号 JPH02295190(A) 申请公布日期 1990.12.06
申请号 JP19890116417 申请日期 1989.05.10
申请人 FUJITSU LTD 发明人 MAKIHARA HIROSHI;SUZUKI HITOSHI;UDAGAWA ETSURO
分类号 H05K3/46;C04B35/581;H01L23/15;H05K1/03 主分类号 H05K3/46
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