| 摘要 |
PURPOSE: To obtain a copper aluminum conductor having a superior electromigration characteristic and a low weight percentage of copper by providing an intermetallic compound layer on the surface of a copper aluminum layer to which a copper of <2.0% is vapor-deposited through spattering. CONSTITUTION: A mutually connected metallurgy is comprised of a four-layer structure and an interplanar stud 10 which is surrounded with an insulator 8 and is connected with an element substrate 6, and the four-layer structure is made of intermetallic compound formed through reaction between a conductor layer 14 and annealed surface layer 12, and its lower part is formed of spattered layer, TiAl3 for example. The conductor layer 14, made of copper aluminum with low weight percentage (<2) of copper, is vapor-deposited through sputtering on a sputter layer made of intermetallic compound. A second intermetallic compound layer is on the layer 14, and its thickness and composition are the same as those of the spatter layer. Then a layer 18 made of copper 0.5% aluminum or pure aluminum is vapor-deposited through sputtering on the structure. Thus, a copper aluminum conductor which has a superior electromigration characteristic and a low weight percentage of copper can be obtained. |
