| 摘要 |
PURPOSE: To increase the maximum breakdown voltage, without increasing the number of production steps by forming a number of conductive regions at the specified positions within spiral areas. CONSTITUTION: This resistor is provided with a first terminal connected with a first tip of a spiral region 4 on a first plane of a semiconductor substrate 1 of first conductive type and a second terminal connected electrically with a second plane of the substrate 1, through an overly-doped area of the same conductive type as the substrate 1. Then a number of conductive areas 11 are formed at the specified positions within the spiral areas 4. For example, a P<+> -type area 11 is arranged at a specified length per 1/4 of spiral turn. Thus, maximum breakdown voltage of the spiral resistor can be increased, without increasing the number of production steps. |
