| 摘要 |
PURPOSE: To form a pattern with minimum damage to a device function by selectively irradiating a main body surface area comprising a device functional material. CONSTITUTION: A device comprises, through a transportation part 11, a deposition device 10 for gas source molecular beam epitaxy attached with an in-situ process device, and the transportation part 11 is provided with a load rock 12 for introducing a pre-material. The in-situ devices comprises a beam writing chamber 13 and an etching chamber 14, with these chambers being mutually connected with a transportation part 15. For minimum mutual contamination, these chambers, while each being independent, individually receive pump-action by gate valves 16, 17, and 18. The beam-writing chamber 13 comprising a beam source 20, wherein with a moving convergent ion beam 21 is generated, and the surface part of a device 22 is selectively exposed to light. |
