| 摘要 |
PURPOSE:To reduce the laser oscilating threshold values preventing the laser beam from being reflected from the PHS electrode surface by a method wherein the resonator side flat part of the PHS (plated heat sink) electrode is extended longer than the resonator while the end of PHS electrode is formed virtually into the rack type. CONSTITUTION:The multilayered epitaxial layer 22 is provided on the first surface of the GaAs substrate 21 and the ohmic electrode 23 is provided on the second surface of said substrate 21 while the p side ohmic electrode 24 is provided on said layer 22 and the PHS electrode is provided on the p side ohmic electrode. In the crystal end to be the resonator comprising the GaAs substrate 21 and the p type ohmic electrode 24, assuming the length produced by the crystal etching and the length of the resonator flat part of the PHS electrode respectively to be A and B, they must be A<=B. The PHS electrode is formed virtually into the rack type provided with an angle not getting into the region of the laser beam emitting from the resonator. |
