| 摘要 |
PURPOSE:To deflect a light beam by providing a step at an approximately central part of a semiconductor layer beneath an active layer which constitutes the optical semiconductor devcie, providing a stripe region in the vicinity of the step, providing a light irradiating window at the part of an electrode layer which is provided on the surface and corresponds to the step, and obtaining asymmetric refractive index distribution. CONSTITUTION:On an n type InP substrate 11, an n type InGaAsP layer 12 is epitaxially grown. Etching is performed and the step is formed at the approximately central part of the layer 12. An n type InP confining layer 13 and an InGaAsP active layer 14 are grown on the entire surface including the step so as to obtain flat surface. A p type InP confining layer 15 and an n type InGaAsP cap layer 16 are further layered. Then, p type stripe region 17, whose lower end enters the inside of the layer 15 in the vicinity of the step, is formed in the layer 16 by the diffusion of Cd, Zn, and the like. A positive electrode 18 is deposited on the layer 16. A light irradiating window 18a which faces the step is provided along the region 17. A negative electrode 19 is deposited on the back surface of the substrate 11. |
