Thyristor with emitter shunt connections - has N-doped thermally conductive N-base extensions

摘要

A thyristor has an n-emitter (1a, b) contacted by a cathode-side electrode (5, 6) at a first major face (9), a p-base (2), an n-base and a p-emitter (4) contacted by an anode-side electrode (7) at a second major face (12), the p-emitter (4) having recesses (10) filled by extensions (11, 11a) of the adjacent n-base (3) which are contacted, in common with the p-emitter (4), by one of the electrodes (7). Each extension (11, 11a) of the base (3) consists at least partly (11a) of a doped thermally conductive semiconductor material of conductivity type corresponding to that of the base (3). The extensions pref. consist of silicon with n-conductivity and thermal conductivity provided by a dopant selected from Mo, Ge, Cs, Ba, Se and Nb. ADVANTAGE - Temp. dependency of firing current of the thyristor is eliminated or much reduced in a simple manner. The temp. region, in which the max. blocking voltage in the forward direction is ensured, is extended to higher temps.