发明名称 HIGHLY SENSITIVE RESIST AND RESIST PATTERN FORMING METHOD
摘要 PURPOSE:To obtain a good resist form in a fine pattern by incorporating a specified amount of acid generating agent and a specified amount of specified compound in a base polymer. CONSTITUTION:Hundred pts.wt. of the base polymer contain 0.1 - 10 pts.wt. of the acid generating agent and 0.1 - 3 pts.wt. of the compound represented by formula I in which each of R, R', and R' is an optionally substituted hydrocarbon group, thus permitting an amine compound produced in a solid phase is neutralized with the acid, so, a good resist form to be obtained even in a fine pattern because an acid concentration is uniformized in the vertical direction, and a good pattern to be also formed even in the range where the contrast of light intensity lowers near a pattern rule of 0.35mum.
申请公布号 JPH02296250(A) 申请公布日期 1990.12.06
申请号 JP19890117868 申请日期 1989.05.11
申请人 SONY CORP 发明人 SAITO MASAO
分类号 G03F7/038;G03F7/004;G03F7/039;H01L21/027;H01L21/30 主分类号 G03F7/038
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