| 摘要 |
PURPOSE: To provide a doped silicon area for contact point connection of a device area, while adjoining a step part by injecting a dopant impurity into the surface of a silicon layer, so that a sidewall silicon area is shielded from dopant impurities and selectively etching/removing an undoped sidewall silicon area. CONSTITUTION: By forming a sidewall 11a, which limits a device area 16 and a step part 11 comprising an upper part surface 11b on a main surface 11a, the device area 16 is demarcated. Then a silicon layer 13 is deposited, so that the sidewall 11a and the upper part surface 11b of the step part and the adjoining lower part surface area 12a are covered, and a dopant impurity is injected, so that a sidewall silicon area 13a is shielded from the dopant impurity. With the undoped sidewall silicon area 13a having been removed by selective etching. Then with a silicon area 13c on a lower surface area 12a adjoining the step part 11 masked, a silicon area 13b on the upper part surface 11b of the step part 11 is removed.
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