| 摘要 |
PURPOSE: To allow programming of a circuit electrically after manufacture by applying a programming voltage equal to or above a breakdown voltage between a drain and a source, and forming a conductive filament in a channel where a drain area is combined to a source region. CONSTITUTION: A transistor 10 is formed on the surface of a semiconductor layer 12, comprising diffusion drain regions 17 and 22 and diffusion source regions 19 and 24. The drain regions 17 and 22 and the source regions 19 and 24 are separated from each other with a channel region 6, with at least drain regions 17 and 22 provided with a silicide layer 28 formed at a part of own surface. With a programming voltage equal to or above the breakdown voltage between the drain regions 17 and 22 and the source regions 19 and 24 applied, a conductive filament 40 which connects the drain areas 17 and 22 in conduction and the source areas 19 and 24 in a channel area 26 is formed. |
